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FDMS007N08LC - N-Channel MOSFET

General Description

This N

ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 6.7 mW at VGS = 10 V, ID = 21 A.
  • Max rDS(on) = 9.9 mW at VGS = 4.5 V, ID = 17 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS007N08LC N-Channel Shielded Gate POWERTRENCH) MOSFET 80 V, 84 A, 6.7 mW Description This N−Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 6.7 mW at VGS = 10 V, ID = 21 A • Max rDS(on) = 9.9 mW at VGS = 4.