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FDMS0306AS - N-Channel MOSFET

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FDMS0306AS Product details

Description

Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency SyncFET Schottky Body Diode MSL1 Robust Package Design 100% UIL Tested RoHS Compliant The FDMS0306AS has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the l

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