FDMS0312AS - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMS0312AS
Manufacturer	ON Semiconductor
File Size	504.81 KB
Description	N-Channel MOSFET
Datasheet	FDMS0312AS-ONSemiconductor.pdf

FDMS0312AS Product details

Description

The FDMS0312AS has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

Features

Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 18 A.
Max RDS(on) = 6.2 mW at VGS = 4.5 V, ID = 16 A.
Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
SyncFET Schottky Body Diode.
MSL1 Robust Package Design.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 20, 2023 |