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FDMS0310S - MOSFET

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FDMS0310S Product details

Description

January 2015 Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 robust package design The FDMS0310S has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining exce

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