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FDMS0309AS - MOSFET

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FDMS0309AS Product details

Description

Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 Robust Package Design 100% UIL tested RoHS Compliant The FDMS0309AS has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the

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