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FDMS3602S - 25V Asymmetric Dual N-Channel MOSFET

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ON Semiconductor

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FDMS3602S 25V Asymmetric Dual N-Channel MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – FDMS3602S

Datasheet Details

Part number	FDMS3602S
Manufacturer	ON Semiconductor
File Size	1.96 MB
Description	25V Asymmetric Dual N-Channel MOSFET
Datasheet	FDMS3602S Datasheet
Additional preview pages of the FDMS3602S datasheet.

Product details

Features

Q1: N-Channel.
Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A.
Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel.
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A.
Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant This devic.

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Published: Dec 17, 2019 |