FDMS3660AS - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS3660AS
Manufacturer	Fairchild Semiconductor
File Size	389.11 KB
Description	MOSFET
Datasheet	FDMS3660AS Datasheet
Additional preview pages of the FDMS3660AS datasheet.

Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE Pin 1 Pin

Features

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant July 2013 Gen.

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Published: Jan 11, 2017 |