FDMS3662 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
* Advanced Package and Silicon combination for low rDS(on)
* MSL1 robust package design .

Description

* Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
* Advanced Package and Silicon combination for low rDS(on)
* MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that.

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