Datasheet Summary
FDMS3662 N-Channel Power Trench® MOSFET
November 2014
N-Channel Power Trench® MOSFET
100V, 39A, 14.8mΩ
Features
General Description
- Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- 100% UIL Tested
- RoHS pliant
Application
- DC
- DC Conversion
Top Bottom
Pin 1
Pin 1 S
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise...
