FDMS3662 - MOSFET

Fairchild (onsemi)

General Description

Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minim

Key Features

General.

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FDMS3662 mosfet by Fairchild (onsemi) - Datasheet Preview

Datasheet Details

Part number	FDMS3662
Manufacturer	Fairchild (onsemi)
File Size	308.77 KB
Description	MOSFET
Datasheet	FDMS3662 Datasheet

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FDMS3662 N-Channel Power Trench® MOSFET November 2014 FDMS3662 N-Channel Power Trench® MOSFET 100V, 39A, 14.8mΩ Features General Description Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.