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FDMS3662 Datasheet Fairchild Semiconductor

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General Description „ Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design This N-Channel MOSFET is produced using Fa.

FDMS3662 FDMS3662 FDMS3662
TAGS
FDMS3662
MOSFET
FDMS3660AS
FDMS3660S
FDMS3662
Fairchild Semiconductor

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