FDMS3669S datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

Q1: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 .

Application

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 P.

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) h.

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