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FDMS3664S Datasheet Dual N-Channel MOSFET

Manufacturer: onsemi

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General Description

This device includes two specialized N−Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency.

Overview

MOSFET – Dual, N-Channel, Asymmetric, POWERTRENCH), Power Stage FDMS3664S General.

Key Features

  • Q1: N.
  • Channel.
  • Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
  • Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
  • Channel.
  • Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A.
  • Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • This Device i.

📁 Similar Datasheet

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Fairchild Semiconductor Logo FDMS3664S MOSFET Fairchild Semiconductor

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