FDMS3664S - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMS3664S
Manufacturer	ON Semiconductor
File Size	974.93 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMS3664S-ONSemiconductor.pdf

FDMS3664S Product details

Description

This device includes two specialized N Channel MOSFETs in a dual PQFN package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N.
Channel.
Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
Channel.
Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A.
Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
This Device i.

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Published: Dec 20, 2023 |