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FDMS3664S - Dual N-Channel MOSFET

Description

This device includes two specialized N

in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Features

  • Q1: N.
  • Channel.
  • Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
  • Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
  • Channel.
  • Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A.
  • Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • This Device i.

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Datasheet preview – FDMS3664S

Datasheet Details

Part number FDMS3664S
Manufacturer ON Semiconductor
File Size 974.93 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMS3664S Datasheet
Additional preview pages of the FDMS3664S datasheet.

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Full PDF Text Transcription

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MOSFET – Dual, N-Channel, Asymmetric, POWERTRENCH), Power Stage FDMS3664S General Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A • Max RDS(on) = 3.2 mW at VGS = 4.
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