GS-065-030-2-L transistor equivalent, 650v e-mode gan transistor.
* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 50 mΩ
* IDS,max =.
* Bridgeless Totem Pole PFC
* Consumer, Industrial and Datacenter High
Density Power Supply
* High Power Ada.
The GS-065-030-2-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Isl.
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