GS-065-011-6-LR transistor equivalent, 700v e-mode gan transistor.
* 700 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 125 mΩ
* IDSmax,D.
* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging
* Power Factor Correction
* Applianc.
The GS-065-011-6-LR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented I.
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