GS-065-030-6-LL transistor equivalent, 700v e-mode gan transistor.
* 700 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, TOLL package
* RDS(on) = 40 mΩ
* IDS,max = 40 A /.
* Bridgeless Totem Pole PFC
* Industrial and Datacenter High
Density Power Supply
* Appliance and Industrial.
The GS-065-030-6-LL is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented I.
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