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GS-065-030-6-LL Datasheet, GaN Systems

GS-065-030-6-LL transistor equivalent, 700v e-mode gan transistor.

GS-065-030-6-LL Avg. rating / M : 1.0 rating-12

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GS-065-030-6-LL Datasheet

Features and benefits


* 700 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, TOLL package
* RDS(on) = 40 mΩ
* IDS,max = 40 A /.

Application


* Bridgeless Totem Pole PFC
* Industrial and Datacenter High Density Power Supply
* Appliance and Industrial.

Description

The GS-065-030-6-LL is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented I.

Image gallery

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TAGS

GS-065-030-6-LL
700V
E-mode
GaN
transistor
GaN Systems

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