GS-065-030-2-L Datasheet | Pinout, Features, Price Comparison & PDF

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, TOLL package • RDS(on) = 40 mΩ • IDS,max

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GS-065-030-2-L 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ •

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