Datasheet Details
| Part number | GS-065-011-1-L |
|---|---|
| Manufacturer | GaN Systems |
| File Size | 1.10 MB |
| Description | 650V E-mode GaN transistor |
| Datasheet |
 GS-065-011-1-L Datasheet
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General Description
The GS-065-011-1-L is an enhancement mode GaNon-Silicon power transistor.
The properties of GaN allow for high current, high voltage breakdown and high switching frequency.
Key Features
- 650 V enhancement mode power transistor.
- 850 V transient drain-to-source voltage.
- Bottom-cooled, small 5x6 mm PDFN package.
- RDS(on) = 150 mΩ.
- IDSmax,DC = 11 A / IDSmax,Pulse = 19A.
- Ultra-low FOM.
- Simple gate drive requirements (0 V to 6 V).
- Transient tolerant gate drive (-20 V / +10 V).
- High switching frequency (> 1 MHz).
- Fast and controllable fall and rise times.
- Reverse conduction capability.