GS-065-011-1-L
GS-065-011-1-L is 650V E-mode GaN transistor manufactured by GaN Systems.
GS-065-011-1-L 650 V E-mode GaN transistor
Features
- 650 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, small 5x6 mm PDFN package
- RDS(on) = 150 mΩ
- IDSmax,DC = 11 A / IDSmax,Pulse = 19A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6+4) pliant
Package Outline top view
Circuit Symbol
Applications
- Power Adapters
- LED Lighting Drivers
- Fast Battery Charging
-...
