logo

GS-065-018-2-L Datasheet, GaN Systems

GS-065-018-2-L transistor equivalent, 650v e-mode gan transistor.

GS-065-018-2-L Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 865.59KB)

GS-065-018-2-L Datasheet

Features and benefits


* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 78 mΩ
* IDSmax,DC.

Application


* Consumer and Industrial Power Supplies
* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging.

Description

The GS-065-018-2-L is a 650V enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented.

Image gallery

GS-065-018-2-L Page 1 GS-065-018-2-L Page 2 GS-065-018-2-L Page 3

TAGS

GS-065-018-2-L
650V
E-mode
GaN
transistor
GaN Systems

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts