GS-065-011-2-L transistor equivalent, 650v e-mode gan transistor.
* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled 8x8 mm PDFN package
* RDS(on) = 150 mΩ
* IDS,max =.
* Consumer and Industrial Power Supplies
* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging.
The GS-065-011-2-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Isl.
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