GS-065-008-1-L Datasheet, GaN Systems

* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, small 5x6 mm PDFN package
* RDS(on) = 225 mΩ
* ID.

* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging
* Power Factor Correction
* Applianc.

The GS-065-008-1-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Isl.

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