-30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Swi.

Pin Description ( TO-252-2L ) AFP3679S 30V P-Channel Enhancement Mode MOSFET Features -30V/-20A,RDS(ON)=10mΩ@VGS=-10V .

AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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