AFP3401S datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

-30V/-4.0A,RDS(ON)=65mΩ@VGS=-10.0V -30V/-3.2A,RDS(ON)=80mΩ@VGS=-4.5V -30V/-1.0A,RDS(ON)=105mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23-3.

Application

Pin Description ( SOT-23-3L ) AFP3401S 30V P-Channel Enhancement Mode MOSFET Features -30V/-4.0A,RDS(ON)=65mΩ@VGS=-10..

Description

AFP3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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