AFP3405AS mosfet equivalent, p-channel mosfet.
-30V/-4.2A,RDS(ON)=34mΩ@VGS=-10V -30V/-3.2A,RDS(ON)=48mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design
Application
Power Mana.
Pin Description ( SOT-23 )
AFP3405AS
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-4.2A,RDS(ON)=34mΩ@VGS=-10V -.
AFP3405AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
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