-30V/-6.0A,RDS(ON)=32mΩ@VGS=10V -30V/-4.5A,RDS(ON)=42mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Manage.

Pin Description ( TSOP-6 ) AFP3411 30V P-Channel Enhancement Mode MOSFET Features -30V/-6.0A,RDS(ON)=32mΩ@VGS=10V -30V.

AFP3411, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFP3413

AFP3413A

AFP3415

AFP3415EA

AFP3401AS

AFP3401S

AFP3403A

AFP3405

AFP3405AS

AFP3407AS

AFP3425

AFP3427W

AFP3433WS

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