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AFP3403A - P-Channel MOSFET

Download the AFP3403A datasheet PDF. This datasheet also covers the AFP3403A-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFP3403A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -30V/-2.6A,RDS(ON)=130mΩ@VGS=-10V -30V/-2.2A,RDS(ON)=160mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=270mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP3403A-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP3403A
Manufacturer Alfa-MOS
File Size 697.28 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3403A Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP3401AS P-Channel MOSFET
AFP3401S P-Channel Enhancement Mode MOSFET
AFP3405 P-Channel Enhancement Mode MOSFET
AFP3405AS P-Channel MOSFET
AFP3407AS P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP3403A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP3403A 30V P-Channel Enhancement Mode MOSFET Features -30V/-2.6A,RDS(ON)=130mΩ@VGS=-10V -30V/-2.2A,RDS(ON)=160mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=270mΩ@VGS=-2.
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