AFP3413 mosfet equivalent, p-channel enhancement mode mosfet.
-20V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=125mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=205mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptio.
Pin Description ( SOT-23-3L )
AFP3413
20V P-Channel Enhancement Mode MOSFET
Features
-20V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V.
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