-20V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=125mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=205mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptio.

Pin Description ( SOT-23-3L ) AFP3413 20V P-Channel Enhancement Mode MOSFET Features -20V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V.

AFP3413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

AFP3411

AFP3413A

AFP3415

AFP3415EA

AFP3401AS

AFP3401S

AFP3403A

AFP3405

AFP3405AS

AFP3407AS

AFP3425

AFP3427W

AFP3433WS

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