AFP3401AS datasheet, mosfet equivalent, Alfa-MOS

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 765.84KB)

Features and benefits

-30V/-2.4 RDS(ON)=58mΩ@VGS=-10.0V -30V/-1.8 RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2 RDS(ON)=80mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23 packa.

Application

Pin Description ( SOT-23 ) AFP3401AS 30V P-Channel Enhancement Mode MOSFET Features -30V/-2.4 RDS(ON)=58mΩ@VGS=-10.0V .

Description

AFP3401AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

Image gallery