AFP3407AS datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10.0V z -30V/-2.4A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maxim.

Application

Pin Description ( SOT-23 ) AFP3407AS 30V P-Channel Enhancement Mode MOSFET Features z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10..

Description

AFP3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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