-30V/-4.0A,RDS(ON)=38mΩ@VGS=-10V -30V/-2.8A,RDS(ON)=48mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) SOT-23-3L package design Application Power M.

Pin Description ( SOT-23-3L ) AFP3405 30V P-Channel Enhancement Mode MOSFET Features -30V/-4.0A,RDS(ON)=38mΩ@VGS=-10V .

AFP3405, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFP3401AS

AFP3401S

AFP3403A

AFP3405AS

AFP3407AS

AFP3411

AFP3413

AFP3413A

AFP3415

AFP3415EA

AFP3425

AFP3427W

AFP3433WS

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