AFP3415 datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

-20V/-4.9A,RDS(ON)=43mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=55mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=75mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional o.

Application

Pin Description ( SOT-23-3L ) AFP3415 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.9A,RDS(ON)=43mΩ@VGS=4.5V .

Description

AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

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