-30V/-5.0A,RDS(ON)=55mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=70mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Pin Description ( SOT-23-6L ) AFP3056WS 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=55mΩ@VGS=-10.

AFP3056WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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