-30V/-9A,RDS(ON)=60mΩ@VGS=-10V -30V/-7A,RDS(ON)=72mΩ@VGS=-4.5V -30V/-5A,RDS(ON)=108mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L packag.

Pin Description ( TO-252-2L ) AFP3050S 30V P-Channel Enhancement Mode MOSFET Features -30V/-9A,RDS(ON)=60mΩ@VGS=-10V -.

AFP3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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