-120V/-1.0A,RDS(ON)=1.5Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.7Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Pin Description ( SOT-23-6L ) AFP3447W 120V P-Channel Enhancement Mode MOSFET Features -120V/-1.0A,RDS(ON)=1.5Ω@VGS=-1.

AFP3447W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP3401AS

AFP3401S

AFP3403A

AFP3405

AFP3405AS

AFP3407AS

AFP3411

AFP3413

AFP3413A

AFP3415

AFP3415EA

AFP3425

AFP3427W

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