Infineon
PTFA092213EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213EL PTFA092213FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz
Description
Th
(7 views)
Infineon
PTFA241301E - Thermally-Enhanced High Power RF LDMOS FET
PTFA241301E PTFA241301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz
Description
The PTFA241301E and PTFA241301F are thermally
(7 views)
Infineon
PTFA261301E - Thermally-Enhanced High Power RF LDMOS FET
PTFA261301E PTFA261301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz
Description
The PTFA261301E and PTFA261301F are thermally
(7 views)
Infineon
PTFA092211FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211EL PTFA092211FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz
Description
Th
(6 views)
Infineon
PTFA092213FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213EL PTFA092213FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz
Description
Th
(6 views)
Infineon
PTFC261402FC - Thermally-Enhanced High Power RF LDMOS FET
(6 views)
Infineon
PTFB093608SV - Thermally-Enhanced High Power RF LDMOS FET
PTFB093608SV
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz
Description
The PTFB093608SV is an LDMOS FET intended for use in
(6 views)
Infineon
PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PT
(6 views)
Infineon
PTFA072401FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401EL PTFA072401FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz
Description
Th
(3 views)
Infineon
PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PT
(3 views)
Infineon
PTFB091507FH - Thermally-Enhanced High Power RF LDMOS FET
PTFB091507FH
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz
Description
The PTFB091507FH is an LDMOS FET intended for use in
(3 views)
Infineon
PTFB213004F - High Power RF LDMOS Field Effect Transistor
PTFB213004F
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Description
The PTFB213004F is a 300-watt LDMOS FET designed for clas
(2 views)
Infineon
PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503EL PTFB212503FL
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz
Description
The PTFB212503EL and PTFB212503FL are 240-w
(2 views)
Infineon
PTFB201402FC - High Power RF LDMOS Field Effect Transistor
PTFB201402FC
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Description
The PTFB201402FC integrates two 70 W LDMOS FETs in
(2 views)
Infineon
PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL PTFB211803FL
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz
Description
The PTFB211803EL and PTFB211803FL are 180-w
(2 views)
Infineon
PTFB211803EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL PTFB211803FL
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz
Description
The PTFB211803EL and PTFB211803FL are 180-w
(2 views)
Infineon
PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501E PTFB211501F
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz
Description
The PTFB211501E and PTFB211501F are thermally
(2 views)
Infineon Technologies AG
PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for E
(2 views)
Infineon Technologies AG
PTF080901E - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E
(2 views)
Infineon Technologies AG
PTF210901E - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for
(2 views)