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PTFA092211FL, PTFA092211EL Datasheet - Infineon

PTFA092211FL Thermally-Enhanced High Power RF LDMOS FETs

The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-.

PTFA092211FL Features

* Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =

* 37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P

* 1dB = 250 W

PTFA092211EL_Infineon.pdf

This datasheet PDF includes multiple part numbers: PTFA092211FL, PTFA092211EL. Please refer to the document for exact specifications by model.
PTFA092211FL Datasheet Preview Page 2 PTFA092211FL Datasheet Preview Page 3

Datasheet Details

Part number:

PTFA092211FL, PTFA092211EL

Manufacturer:

Infineon ↗

File Size:

442.53 KB

Description:

Thermally-enhanced high power rf ldmos fets.

Note:

This datasheet PDF includes multiple part numbers: PTFA092211FL, PTFA092211EL.
Please refer to the document for exact specifications by model.

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TAGS

PTFA092211FL PTFA092211EL Thermally-Enhanced High Power LDMOS FETs Infineon

PTFA092211FL Distributor