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PTFA092201F, PTFA092201E Datasheet - Infineon

PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092201E Package H-362.

PTFA092201F Features

* IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =

PTFA092201E_Infineon.pdf

This datasheet PDF includes multiple part numbers: PTFA092201F, PTFA092201E. Please refer to the document for exact specifications by model.
PTFA092201F Datasheet Preview Page 2 PTFA092201F Datasheet Preview Page 3

Datasheet Details

Part number:

PTFA092201F, PTFA092201E

Manufacturer:

Infineon ↗

File Size:

397.27 KB

Description:

Thermally-enhanced high power rf ldmos fets.

Note:

This datasheet PDF includes multiple part numbers: PTFA092201F, PTFA092201E.
Please refer to the document for exact specifications by model.

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PTFA092201F PTFA092201E Thermally-Enhanced High Power LDMOS FETs Infineon

PTFA092201F Distributor