Datasheet Specifications
- Part number
- PTFA092211EL
- Manufacturer
- Infineon ↗
- File Size
- 442.53 KB
- Datasheet
- PTFA092211EL_Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FETs
Description
PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 * 960 MHz Descri.
Features
* Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =Applications
* in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 Two-carrier WCDMA Performance VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCDPTFA092211EL Distributors
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