PTFA190451E - Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

PTFA190451E Datasheet Preview — Preview of PTFA190451E PDF

Datasheet Details

Part number	PTFA190451E
Manufacturer	Infineon ↗ Technologies
File Size	386.25 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA190451E_InfineonTechnologies.pdf

PTFA190451E Product details

Description

The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band.

Features

Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion =.
39 dBc - Adjacent channel power =.
42 dBc Typical CW performance, 1960 MHz, 28 V - Output power at P.
1dB = 60 W - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSW.

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Published: Jul 11, 2011 |