PTFA192001F, PTFA192001E - Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

Datasheet Details

Part number	PTFA192001F, PTFA192001E
Manufacturer	Infineon ↗ Technologies
File Size	296.01 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA192001E_InfineonTechnologies.pdf
Note	This datasheet PDF includes multiple part numbers: PTFA192001F, PTFA192001E. Please refer to the document for exact specifications by model.

The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 30 Features.
25 Pb-free, RoHS-compliant and therma.

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Published: Jul 11, 2011 |