PTFA211801F Datasheet (Infineon) - Thermally-Enhanced High Power RF LDMOS FET

PTFA211801F, Thermally-Enhanced High Power RF LDMOS FET

The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications.

They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

PTFA2118

PTFA211801F Features

* Thermally-enhanced packages, Pb-free and RoHS-compliant

* Broadband internal matching

* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =

* 36 dBc - Ad