PTFA212002E Datasheet (Infineon) - Thermally-Enhanced High Power RF LDMOS FET

PTFA212002E, Thermally-Enhanced High Power RF LDMOS FET

The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET.

It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Full gold metallization ensures excellent

PTFA212002E Features

* ons are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Preliminary Data Sheet 9 of 10 Rev. 02