2N7000 Datasheet | Pinout, Features, Price Comparison & PDF

WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Th

2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

TSM2N7000 60V N-Channel MOSFET SOT-92 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V ID (mA) 500 Fe

2N7000CSM MECHANICAL DATA Dimensions in mm (inches) 2.54 ± 0.13 (0.10 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.51 ± 0.10 (0.02 ± 0.004) 3 0.31 (0.012

MOSFET – Advanced Small-Signal 2N7000BU / 2N7000TA Description These N−channel enhancement mode field effect transistors are produced using onsemi’s

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 2 at VGS = 10 V 60 4 at VGS = 4.5 V VGS(th) (V)

N-Channel MOSFET ESD Protected 2000V Transistor 2N7000K N-Channel MOSFET ESD Protected 2000V Transistor Features • ESD protected 2000V • High densi

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage cont

2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS

-. —. —-..-.. .,, — “,.. . . .- N-CHANNEL ISSUE 2MARCH ENHANCEMENT MODE VERTICAL DMOS FET 94 FEATURES * *R 60 Volt VcEo 0S(0.) = 5 ‘2 2N700

2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controolled small signal

N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design fo

VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S

2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled

2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VG

N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are