2N7000 Datasheet | Specifications & PDF Download

2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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TSM2N7000 60V N-Channel MOSFET SOT-92 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V ID (mA) 500 Fe

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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www.DataSheet4U.com ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F G2N7000 Description N-CHANNEL ENHANCEMENT MODE MOSFET The G2N7000 is designed

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

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HI-SINCERITY MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

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TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: 1. Source 2. Gate 3. Drain www.DataSheet4U.com PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS =

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WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Th

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CMT2N7000 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is produced using high cell d

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TSM2N7000 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V ID = 200mA RDS (on), Vgs @ 10V, Ids @ 500mA = 5

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

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VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S

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MOSFET – Advanced Small-Signal 2N7000BU / 2N7000TA Description These N−channel enhancement mode field effect transistors are produced using onsemi’s

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MOSFET – Advanced Small-Signal 2N7000BU / 2N7000TA Description These N−channel enhancement mode field effect transistors are produced using onsemi’s

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N-Channel MOSFET ESD Protected 2000V Transistor 2N7000K N-Channel MOSFET ESD Protected 2000V Transistor Features • ESD protected 2000V • High densi

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