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H2N7000 - N-Channel Transistor

Download the H2N7000 datasheet PDF. This datasheet also covers the H2N7000_Hi variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Diss

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N7000_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N7000
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.98 KB
Description N-Channel Transistor
Datasheet download datasheet H2N7000 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.10 Page No. : 1/5 Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature ..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..................
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