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H2N60D - N-Channel MOSFET

Download the H2N60D datasheet PDF. This datasheet also covers the H2N60U variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • 　Originative New Design 　　Superior Avalanche Rugged Technology 　　Robust Gate Oxide Technology 　　Very Low Intrinsic Capacitances 　　Excellent Switching Characteristics 　　Unrivalled Gate Charge: 5.5nC(Typ. ) 　　Extended Safe Operating Area 　　Lower RDS(ON): 4.0Ω(Typ. ) @ VGS=10V 　　100% Avalanche Tested 　　Package: TO-251 & TO-252（IPAK & DPAK） ID=1.8A BVDSS=600V RDS(on)=4.0Ω 　.
  • 　　,,,,,RoHS 　.
  • 　　、LCD、LED、、UPS、 　　、、、、、、 　　、、 　.
  • 　　TO-251（IPAK） 　　TO-252（DPAK） 2N60 Series Pin Assignment 3-Lea.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N60U-HAOHAI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N60D
Manufacturer HAOHAI
File Size 395.16 KB
Description N-Channel MOSFET
Datasheet download datasheet H2N60D Datasheet

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Other Datasheets by HAOHAI

Part Number Description
H2N60F N-Channel MOSFET
H2N60P N-Channel MOSFET
H2N60U N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Series N-Channel MOSFET 4Kpcs/ 5Kpcs/ 24Kpcs 25Kpcs 　■Features 　　Originative New Design 　　Superior Avalanche Rugged Technology 　　Robust Gate Oxide Technology 　　Very Low Intrinsic Capacitances 　　Excellent Switching Characteristics 　　Unrivalled Gate Charge: 5.5nC(Typ.) 　　Extended Safe Operating Area 　　Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V 　　100% Avalanche Tested 　　Package: TO-251 & TO-252（IPAK & DPAK） ID=1.8A BVDSS=600V RDS(on)=4.
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