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H2N6426 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the H2N6426 datasheet PDF. This datasheet also covers the H2N6426_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Darlington Transistor Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW Maximum Voltages and Currents (TA=25°C) BVCEO Collec

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Note: The manufacturer provides a single datasheet file (H2N6426_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N6426
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.19 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N6426 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Page No. : 1/4 Description Darlington Transistor Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................................
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