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H2N6517 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the H2N6517 datasheet PDF. This datasheet also covers the H2N6517_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The H2N6517 is designed for general purpose applications requiring high breakdown voltages.

Features

  • High Collector-Emitter Breakdown Voltage.
  • Low Collector-Emitter Saturation Voltage.
  • The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N6517_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N6517
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.71 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N6517 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No. : 1/5 H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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