Datasheet4U Logo Datasheet4U.com

H2N6520 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the H2N6520 datasheet PDF. This datasheet also covers the H2N6520_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The H2N6520 is designed for general purpose applications requiring high breakdown voltages.

Features

  • High Collector-Emitter Breakdown Voltage.
  • Low Collector-Emitter Saturation Voltage.
  • The H2N6520 is complementary to H2N6517 TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N6520_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N6520
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.70 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N6520 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
H2N60D N-Channel MOSFET HAOHAI
H2N60F N-Channel MOSFET HAOHAI
H2N60P N-Channel MOSFET HAOHAI
H2N60U N-Channel MOSFET HAOHAI
H2N7002SN N-Channel MOSFET HI-SINCERITY

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR
H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR
H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR
H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR
H2N6668 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N6520 is complementary to H2N6517 TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
Published: |