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H2N4124 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the H2N4124 datasheet PDF. This datasheet also covers the H2N4124_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The H2N4124 is designed for general purpose switching and amplifier applications.

Features

  • Complementary to H2N4126.
  • Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N4124_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N4124
Manufacturer Hi-Sincerity Mocroelectronics
File Size 45.24 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N4124 Datasheet

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Part Number Description
H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N4124 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.20 Page No. : 1/4 Description The H2N4124 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4126 • Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)..................................
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