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H2N4126 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the H2N4126 datasheet PDF. This datasheet also covers the H2N4126_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The H2N4126 is designed for general purpose switching and amplifier applications.

Features

  • Complementary to H2N4124.
  • High Power PT: 625mW at 25°C.
  • High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N4126_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N4126
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.73 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N4126 Datasheet

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Part Number Description
H2N4124 NPN EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/4 Description The H2N4126 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4124 • High Power PT: 625mW at 25°C • High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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