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H2N4401 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the H2N4401 datasheet PDF. This datasheet also covers the H2N4401_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The H2N4401 is designed for general purpose switching and amplifier applications.

Features

  • Complementary to H2N4403.
  • High Power Dissipation: 625 mW at 25°C.
  • High DC Current Gain: 100-300 at 150mA.
  • High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N4401_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N4401
Manufacturer Hi-Sincerity Mocroelectronics
File Size 53.86 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N4401 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6215 Issued Date : 1992.09.22 Revised Date : 2002.02.22 Page No. : 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4403 • High Power Dissipation: 625 mW at 25°C • High DC Current Gain: 100-300 at 150mA • High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature...................................................................................................................
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