2N7000G
Features
Type
VDSS
RDS(on) max ID
2N7000
) 2N7002
60 V 60 V
< 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s
- Low Qg uc
- Low threshold drive rod Application te P
- Switching applications ole Description bs This Power MOSFET is the second generation of O STMicroelectronics unique “single feature size”
- strip-based process. The resulting transistor ) shows extremely high packing density for low ont(s resistance, rugged avalanche characteristics and c less critical alignment steps therefore a u remarkable manufacturing reproducibility.
3 2
SOT23-3L
TO-92
Figure 1. Internal schematic diagram
Obsolete Prod SOT23-3L
TO-92
Table 1. Device summary Order codes 2N7000 2N7002
Marking 2N7000G
ST2N
Package TO-92
SOT23-3L
Packaging Bulk
Tape and reel
November 2008
Rev 9
1/14
.st.
Contents
Contents
2N7000, 2N7002
Electrical ratings
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