2N7000 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N- Channel - Enhancement 3 DRAIN 2 GATE 1 SOURCE Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous - Non- repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 - 55 to +150 m W m W/°C °C Unit Vdc Vdc Vdc Vpk m Adc CASE 29- 04, STYLE 22 TO- 92 (TO- 226AA) 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds Symbol RθJA TL Max 357 300 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain- Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero...